BD239B datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BD239 – A – B – C

22/10/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff Current

VCE=30 V

BD239

0.3

VCE=30 V

BD239A

VCE=60 V

BD239B

VCE=60 V

BD239C

IEBO

Emitter Cutoff Current

VBE=5 V

BD239

1.0

BD239A

BD239B

BD239C

ICES

Collector Cutoff Current

(VBE = 0)

VCE=45 V

BD239

0.2

VCE=60 V

BD239A

VCE=80 V

BD239B

VCE=100 V

BD239C

VCEO(sus)

Collector-Emitter

Sustaining Voltage (IB = 0)

(*)

IC =30mA

BD239

BD239A

BD239B

BD239C

100

hFE

DC Current Gain (*)

VCE=4 V

IC=0.2 A

BD239

BD239A

BD239B

BD239C

VCE=4 V

IC=1 A

BD239

BD239A

BD239B

BD239C

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=1 A

IB=200 mA

BD239

0.6

BD239A

BD239B

BD239C

VBE(on)

Base-Emitter Voltage (*)

VCE=4 V

IC=1 A

BD239

1.3

BD239A

BD239B

BD239C

hfe

Small Signal Current Gain

VCE=10 V

IC=0.2 A

f = 1KHz

BD239

BD239A

BD239B

BD239C

VCE=10 V

IC=0.2 A

f = 1MHz

BD239

BD239A

BD239B

BD239C

Transistor frequency

VCE=10 V, IC=0.2 A, f = 1MHz

MHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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