STPS2150_08 datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

STPS2150

2/9

Characteristics

To evaluate the conduction losses use the following equation: P = 0.59 x IF(AV) + 0.04 IF

(RMS)

Table 2.

Absolute Ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

150

IF(AV)

Average forward current

SMA, SMAflat

TL = 145 °C δ = 0.5

DO-15

TL = 130 °C δ = 0.5

IFSM

Surge non repetitive forward

current

SMA, SMAflat

tp = 10 ms sinusoidal

DO-15

150

PARM

Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

2400

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature(1)

175

°C

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

Rth j

–

()

--------------------------

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA, SMAflat

°C/W

Lead length = 10 mm

DO-15

Table 4.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

0.5

1.5

µA

Tj = 125 °C

0.5

1.5

(2)

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.78

0.82

Tj = 125 °C

0.62

0.67

Tj = 25 °C

IF = 4 A

0.86

0.89

Tj = 125 °C

0.70

0.75

tp = 5 ms, δ < 2%

tp = 380 µs, δ < 2%

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