Characteristics

STPS30M60DJF

2/8

Doc ID 023120 Rev 1

1

Characteristics

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, anode terminals 1 and 3 short circuited)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

45

A

Average forward current

δ = 0.5

30

A

Surge non repetitive forward current

250

A

(1)

1.

More details regarding the avalanche energy measurements and diode validation in the avalanche are

provided in the STMicroelectronics’ application notes AN1768 and AN2025.

Repetitive peak avalanche power

3500

W

Maximum repetitive peak avalanche

voltage

80

V

Storage temperature range

-65 to +175

°C

2.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Junction to case

2.0

°C/W

Table 4.

Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage

current

-

-

90

µA

-

20

50

mA

(2)

2.

Forward voltage drop

-

-

0.59

V

-

0.46

0.52

-

-

0.72

-

0.57

0.67

dPtot

dTj

<

1

Rth(j-a)