STPS8H100DEE datasheet(3/8 Pages) STMICROELECTRONICS

No. de pieza	STPS8H100DEE

Descripción Electrónicos	High voltage power Schottky rectifier

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STPS8H100DEE

Characteristics

Doc ID 023272 Rev 1

3/8

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature(

 = 0.5)

PF(AV)(W)

012

34567

δ =tp/T

IF(AV)(A)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

100

125

150

175

IF(AV)(A)

Tamb(°C)

δ =tp/T

Rth(j-a)=Rth(j-c)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

Figure 5.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 6.

Junction capacitance versus

reverse voltage applied (typical

values)

IR(mA)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

2030

40506070

8090

100

VR(V)

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 25 °C

C(pF)

100

1000

100

VR(V)

F=1 MHz

VOSC=30 mVRMS

Tj = 25°C

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