M48T35AV_11 datasheet(21/29 Pages) STMICROELECTRONICS

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M48T35AV

DC and AC parameters

Doc ID 6845 Rev 9

21/29

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where

noted).

Min

Max

Unit

tPD

E or W at VIH before power down

µs

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 µs after

VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time

150

µs

VPFD (min) to VPFD (max) VCC rise time

µs

tRB

VSS to VPFD (min) VCC rise time

µs

trec

VPFD (max) to inputs recognized

200

Symbol

Parameter(1)(2)

Valid for ambient operating temperature: TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where

noted).

All voltages referenced to VSS.

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

2.7

2.9

3.0

VSO

Battery backup switchover voltage

VPFD –100mV

tDR

(3)

At 25 °C, VCC = 0 V.

Expected data retention time

10(4)

CAPHAT™ and M4T32-BR12SH1 SNAPHAT® only, M4T28-BR12SH1 SNAPHAT® top tDR = 7 years (typ).

Years

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