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STA540SAN Datasheet(PDF) 23 Page - STMicroelectronics

No. de pieza STA540SAN
Descripción Electrónicos  4 x 10-watt dual/quad power amplifier
PDF  26 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA540SAN Datasheet(HTML) 23 Page - STMicroelectronics

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STA540SAN
General structure
Doc ID 18306 Rev 1
23/26
8.9
PCB-layout grounding (general rules)
The device has two distinct ground leads, P_GND (power ground) and S_GND (signal
ground) which are practically disconnected from each other at chip level. Correct operation
requires that P_GND and S_GND leads be connected together on the PCB layout by means
of reasonably low-resistance tracks.
For the PCB ground configuration a star-like arrangement, where the center is represented
by the supply-filtering electrolytic capacitor ground, is recommended. In such context, at
least two separate paths must be provided; one for power ground and one for signal ground.
The correct ground assignments are as follows:
standby capacitor (pin 7, or any other standby driving networks): on signal ground
SVR capacitor (pin 6): on signal ground and to be placed as close as possible to the
device
input signal ground (from active/passive signal processor stages): on signal ground
supply filtering capacitors (pins 3 and 13): on power ground. The negative terminal of
the electrolytic capacitor must be directly tied to the battery negative line and this
should represent the starting point for all the ground paths.
8.10
Mute function
If the mute function is required, it can be accessed on SVR (pin 6) as shown in Figure 34.
Figure 34.
Components for layout
VS = 10 to 16 V, VSVR: mute off ≥ 0.6 to 0.8, mute on ≥ 0.2 V
Using a different value for R1 than the suggested 3.3 k
Ω, results in two different situations:
R1 > 3.3 k
Ω:
–
Pop noise improved
–
Lower mute attenuation
R1 < 3.3 k
Ω:
–
Pop noise degradation
–
Higher mute attenuation
0.22
µF
1
DIAGNOSTICS
4
7
D06AU1632_bc
10
µF
10K
ST-BY
IN L
0.47
µF
5
IN BRIDGE
12
470
µF
6
13
1000
µF
100nF
3
VS
2
15
14
OUT L
8
9
10
OUT
BRIDGE
11
0.22
µF
IN R
OUT R
2200
µF
2200
µF
R1 3.3K
R2 10K
MUTE
5V
0
PLAY



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