ACE632 datasheet(3/11 Pages) ACE

No. de pieza	ACE632

Descripción Electrónicos	The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ACE [ACE Technology Co., LTD.]

Página de inicio	http://www.ace-ele.com

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3 / 11 page

ACE632

N&P Pair Enhancement Mode MOSFET

VER 1.3

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250uA

N-Ch

VGS=0V, ID=250uA

P-Ch

-20

Drain-Source On Resistance

RDS(ON)

VGS=4.5V, ID=0.95A

N-Ch

0.26

0.38

VGS=-4.5V, ID=-1.0A

P-Ch

0.42

0.52

VGS=2.5V, ID=0.75A

N-Ch

0.32

0.45

VGS=-2.5V, ID=-0.8A

P-Ch

0.58

0.70

VGS=1.8V, ID=0.65A

N-Ch

0.42

0.80

VGS=-1.8V, ID=-0.5A

P-Ch

0.75

0.95

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

N-Ch

0.35

1.0

VDS=VGS, ID=-250uA

P-Ch

-0.35

-1.0

Gate Leakage Current

IGSS

VDS=0V, VGS=±12V

N-Ch

100

VDS=0V, VGS=±12V

P-Ch

-100

Zero Gate Voltage Drain

Current

IDSS

VDS=20V, VGS=0V

N-Ch

VDS=-20V, VGS=0V

P-Ch

-1

VDS=20V, VGS=0V

TJ=55℃

N-Ch

VDS=-20V, VGS=0V

TJ=55℃

P-Ch

-5

On-State Drain Current

ID(ON)

VDS≧4.5V, VGS =5V

N-Ch

VDS≦-4.5V, VGS =-5V

P-Ch

-2

Diode Forward Voltage

VSD

IS=0.5A, VGS=0V

N-Ch

0.8

1.2

IS=-0.5A, VGS=0V

P-Ch

-0.8

-1.2

Forward Transconductance

gfs

VDS=10V, ID=1.2A

N-Ch

2.6

VDS=-10V, ID=-1.0A

P-Ch

1.5

Dynamic

Total Gate Charge

N-Channel

VDS=10V, VGS=4.5V,

ID≡1.2A

P-Channel

VDS=-10V, VGS=-4.5V,

ID≡-1.0A

N-Ch

1.2

2.0

P-Ch

1.1

1.8

Gate-Source Charge

Qgs

N-Ch

0.2

P-Ch

0.3

Gate-Drain Charge

Qgd

N-Ch

0.3

P-Ch

0.2

Turn-On Time

td(on)

N-Channel

VDD=10V,RL=20Ω

ID=0.5A,

N-Ch

P-Ch

N-Ch

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