2SC6126

2009-07-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6126

High-Speed Switching Applications

DC-DC Converter Applications

LCD Backlighting Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

120

V

120

V

Collector-emitter voltage

50

V

Emitter-base voltage

6

V

DC

3

Collector current (Note1)

Pulse

5

A

Base current

1.5

A

DC

1.0

Collector power

dissipation

t = 10 s

(Note2)

2.5

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the junction temperature is below 150℃.

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit : mm

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)