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SSM3K56FS Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM3K56FS Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() SSM3K56FS 4 5.4. 5.4. 5.4. 5.4. Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD = 10 V, VGS = 4.5 V, ID = 800 mA Min Typ. 1.0 0.12 0.4 Max Unit nC 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = -800 mA, VGS = 0 V Min Typ. -0.82 Max -1.2 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking 2012-07-19 Rev.1.0 |
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