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ATP114 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza ATP114
Descripción Electrónicos  General-Purpose Switching Device Applications
PDF  7 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP114 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP114
No. A1711-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--28A
65
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--28A, VGS=--10V
12
16
mΩ
RDS(on)2
ID=--14A, VGS=--4.5V
15
21
mΩ
RDS(on)3
ID=--7A, VGS=--4V
16.5
24
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
4000
pF
Output Capacitance
Coss
400
pF
Reverse Transfer Capacitance
Crss
315
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
200
ns
Turn-OFF Delay Time
td(off)
450
ns
Fall Time
tf
300
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--55Ap
92
nC
Gate-to-Source Charge
Qgs
15
nC
Gate-to-Drain “Miller” Charge
Qgd
15.5
nC
Diode Forward Voltage
VSD
IS=--55A, VGS=0V
--0.95
--1.5
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP114-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --28A
RL=1.07Ω
VDD= --30V
VOUT
VIN
0V
--10V
VIN
ATP114



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