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ATP113 Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza ATP113
Descripción Electrónicos  General-Purpose Switching Device Applications
PDF  7 Pages
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP113 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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ATP113
No. A1755-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--18A
37
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--18A, VGS=--10V
22.5
29.5
mΩ
RDS(on)2
ID=--9A, VGS=--4.5V
27
38
mΩ
RDS(on)3
ID=--5A, VGS=--4V
29
44
mΩ
Input Capacitance
Ciss
VDS=--20V, f=1MHz
2400
pF
Output Capacitance
Coss
250
pF
Reverse Transfer Capacitance
Crss
195
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
15
ns
Rise Time
tr
125
ns
Turn-OFF Delay Time
td(off)
250
ns
Fall Time
tf
200
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--35A
55
nC
Gate-to-Source Charge
Qgs
7.5
nC
Gate-to-Drain “Miller” Charge
Qgd
12
nC
Diode Forward Voltage
VSD
IS=--35A, VGS=0V
--0.98
--1.5
V
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP113-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=18A
RL=1.67Ω
VDD= --30V
VOUT
VIN
0V
--10V
VIN
ATP113



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