AFT09MS031N datasheet(3/21 Pages) FREESCALE

No. de pieza	AFT09MS031N

Descripción Electrónicos	RF Power LDMOS Transistors

PDF	21 Pages

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Fabricante Electrónico	FREESCALE [Freescale Semiconductor, Inc]

Página de inicio	http://www.freescale.com

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AFT09MS031NR1 AFT09MS031GNR1

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

2.1

—

Output Capacitance

(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

Input Capacitance

(VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

140

—

Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31W,f= 870 MHz

Common--Source Amplifier Power Gain

Gps

16.0

17.2

18.5

Drain Efficiency

ηD

68.0

71.0

—

Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA)

Frequency

(MHz)

Signal

Type

VSWR

Pout

(W)

Test Voltage, VDD

Result

870

>65:1 at all Phase Angles

(3 dB Overdrive)

No Device Degradation

1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

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