40FDR10A datasheet(2/6 Pages) NELLSEMI

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SEMICONDUCTOR

RoHS

Nell High Power Products

Page 2 of 6

www.nellsemi.com

FORWARD CONDUCTION

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

40FD(R)

Maximum average forward current

at maximum case temperature

IF(AV)

180° conduction, half sine wave

IF(RMS)

Maximum RMS forward current

ºC

IFRM

Maximum peak repetitive forward current

220

Maximum peak, one-cycle

non-reptitive surge current

IFSM

t = 10ms

t = 8.3ms

t = 10ms

= 8.3ms

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

I t

Sinusoidal half wave, 100% VRRM

400

420

475

500

800

732

1128

1038

A s

11281

t = 0.1 ms to 10 ms, no voltage reapplied

I √t

Maximum l²t for fusing

(1)

Maximum l²√t for fusing

A √s

Maximum forward voltage drop

T = 125°C

1.081

6.33

VFM

T = 25°C;

= 125A

1.95

Maximum value of threshold voltage

VF(TO)

Maximum value of forward slope resistance

reapplied, initial T =T maximum

(1) 2

Note :

l t for time t =1

2√

√tx

Sinusoidal half wave, 30° conduction

mΩ

Sinusoidal half wave, no voltage

reapplied, initial T =T maximum

100% V

reapplied,

RRM

initial T =T maximum

no voltage reapplied,

initial T =T maximum

SWITCHING

PARAMETER

SYMBOL

UNIT

TEST CONDITIONS

trr

02 to 06

08 to 12

40FD(R)

180

200

500

Typical reverse recovery time

T = 25°C,

I = 1A to V = 30V

-dl /dt = 100 A/µs

160

Qrr

750

240

1300

Typical reverse recovered charge

T = 25°C, I = 1A to V = 30V,

-dl /dt = 100 A/µs

T = 25°C, -dl /dt = 25 A/µs,

π x rated l

F(AV)

T = 25°C,

I = 1A, I = 1.0A,

= 250mA (RG#1 CKT)

T = 25°C, -dl /dt = 25 A/µs,

x rated l

F(AV)

200

500

40FD(R)Series

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