Z01 datasheet(4/12 Pages) STMICROELECTRONICS

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Characteristics

Z01

4/12

Doc ID 7474 Rev 10

Figure 3.

On-state rms current versus

ambient temperature (free air

convection full cycle)

Figure 4.

Relative variation of thermal

impedance versus pulse duration

(Zth(j-a))

(A)

T(RMS)

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

= 60°C/W

(SOT-223)

th(j-a)

= 150°C/W

(TO-92)

th(j-a)

(°C)

amb

th (j-a) = 100°C/W

(SMBflat-3L)

0.01

0.10

1.00

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

Z01xxMUF

Copper surface area

= 5cm²

Z01xxA

Z01xxN

K=[Z

th(j-a)

th(j-a)]

t (s)

Figure 5.

Relative variation of holding

current and latching current versus

junction temperature (typ. values)

Figure 6.

Relative variation of gate trigger

current (IGT) and voltage (VGT)

versus junction temperature

I, I [T ] /

I , I [T =25°C]

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

T (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

Tj(°C)

GT,VGT[Tj]/ IGT,VGT[Tj=25 °C]

GT Q1-Q2

GT Q1-Q2-Q3-Q4

GT Q3

GT Q4

Figure 7.

Surge peak on-state current versus

number of cycles

Figure 8.

Non-repetitive surge peak

on-state current and corresponding

value of I2t sinusoidal pulse width

100

1000

Number of cycles

Repetitive

= 95 °C

amb

Non repetitive

T initial = 25 °C

(A)

TSM

One cycle

T = 20 ms

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

t (ms)

(A), I t (A s)

TSM

dI/dt limitation:

20A/µs

T initial = 25°C

ITSM

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