CDST226-G datasheet(1/2 Pages) COMCHIP

No. de pieza	CDST226-G

Descripción Electrónicos	SMD Switching Diode

PDF	2 Pages

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Fabricante Electrónico	COMCHIP [Comchip Technology]

Página de inicio	http://www.comchiptech.com

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CDST226-G

Features

O

-Power dissipation: 150mW (@TA=25

C)

Mechanical data

-Case: SOT-23

-Terminals: Solder plated, solderable per MIL-

STD-750, Method 2026.

-Marking: C3

Page 1

QW-B0024

SMD Switching Diode

RoHS Device

Maximum Rating (at Ta=25°C unless otherwise noted)

REV:B

mA

V

-55 ~ +125

100

TSTG

VRM

VRRM

VRWM

VR

IO

Power dissipation

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

Non-Repetitive peak reverse voltage

Parameter

Symbol

Limits

Unit

Average rectified output current

Storage temperature range

PD

150

mW

SOT-23

Dimensions in inches and (millimeters)

0.066 (1.70)

0.119 (3.00)

0.110 (2.80)

0.103 (2.60)

0.086 (2.20)

0.020 (0.50)

0.013 (0.35)

0.056 (1.40)

0.047 (1.20)

0.044 (1.10)

0.035 (0.90)

0.083 (2.10)

0.007 (0.20) min

0.006 (0.15) max

0.006 (0.15)

0.002 (0.05)

80

85

OC

Electrical Characteristics (at Ta=25°C unless otherwise noted)

pF

V

μA

4

1.2

IR

CT

Forward voltage

Diode capacitance

Reverse breakdown voltage

Parameter

Symbol

Min

Max

Unit

Reverse leakage current

Test Conditions

80

VBR

Forward continuous current

Peak forward surge current

@10mS

IFM

IFSM

300

2

mA

A

VF

IR=100μA

0.5

VR=80V

IF=100mA

3

V

Reverse recovery time

trr

VR=0V, f=1MHz

nS

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