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DTB114EG-AL3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza DTB114EG-AL3-R
Descripción Electrónicos  DIGITAL TRANSISTORS
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
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DTB114EG-AL3-R Datasheet(HTML) 2 Page - Unisonic Technologies

  DTB114EG-AL3-R Datasheet HTML 1Page - Unisonic Technologies DTB114EG-AL3-R Datasheet HTML 2Page - Unisonic Technologies DTB114EG-AL3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTB114E
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
www.unisonic.com.tw
QW-R206-042,D
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-40~+10
V
Output Current
IOUT
-500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Voltage
VIN(OFF)
VCC= -5V, IOUT= -100μA
-0.5
V
VIN(ON)
VOUT= -0.3V, IOUT= -10mA
-3
Output Voltage
VOUT(ON) IOUT/IIN= -50mA/-2.5 mA
-0.1
-0.3
V
Input Current
IIN
VIN= -5V
-0.88
mA
Output Current
IOUT(OFF)
VCC= -50V , VIN=0V
-0.5
μA
DC Current Gain
hFE
VOUT= -5V, IOUT= -50mA
56
Input Resistance
R1
7
10
13
kΩ
Resistance Ratio
R2/R1
0.8
1
1.2
Transition Frequency
fT
VCE= -10 V, IE=5mA, f=100MHz(Note)
200
MHz
Note: Transition frequency of the device



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