UT3418L-AE3-R datasheet(1/3 Pages) UTC

No. de pieza	UT3418L-AE3-R

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	UTC [Unisonic Technologies]

Página de inicio	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3418

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-226.D

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT3418 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON) < 60mΩ @VGS = 10 V

* RDS(ON) < 70mΩ @VGS = 4.5 V

* RDS(ON) < 155mΩ @VGS = 2.5 V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3418L-AE3-R

UT3418G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34U

L: Lead Free

G: Halogen Free

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UT3418L-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies

UT3418L-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies

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