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BCP68G-25-AA3-R Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza BCP68G-25-AA3-R
Descripción Electrónicos  NPN MEDIUM POWER TRANSISTOR
PDF  3 Pages
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Fabricante Electrónico  UTC [Unisonic Technologies]
Página de inicio  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BCP68G-25-AA3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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BCP68
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R207-008,E
ABSOLUTE MAXIMUM RATINGS (TA=25°C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (Open Emitter)
VCBO
32
V
Collector-Emitter Voltage (Open Base)
VCEO
20
V
Emitter-Base Voltage (Open Collector)
VEBO
5
V
Collector Current
DC
IC
1
A
Peak
ICM
2
A
Peak Base Current
IBM
200
mA
Total Power Dissipation (TA ≤ 25℃)
PD
1.35
W
Junction Temperature
TJ
150
℃
Operating Temperature
TOPR
-45 ~ +150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction To Ambient
θJA
91
℃
/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Emitter Saturation Voltage
VCE(SAT) IC = 1A, IB =100mA
500
mV
Base-Emitter Voltage
VBE
IC = 5mA, VCE = 10V
620
mV
IC = 1A, VCE = 1V
1
V
Collector Cut-off Current
ICBO
IE = 0, VCB = 25V
100
nA
IE = 0, VCB = 25V, TJ = 150℃
10
µA
Emitter Cut-off Current
IEBO
IC = 0, VEB = 5V
100
nA
DC Current Gain
hFE
IC = 5mA, VCE = 10V
50
IC = 500mA, VCE = 1V
85
375
IC = 1A, VCE = 1V
60
Collector Capacitance
CC
IE = ie = 0, VCB = 5V, f = 1MHz
48
pF
Transition Frequency
fT
IC = -10mA, VCE = -5V, f = 100MHz
40
MHz
DC Current Gain Ratio of the
Complementary Pairs
hFE1
hFE2
|IC| = 0.5A, |VCE| = 1V
1.6
CLASSIFICATION OF hFE
RANK
16
25
RANGE
100~250
160~375



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