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PN2907A-AB3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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PN2907A-AB3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page  PN2907A PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R201-041.D ABSOLUTE MAXIUM RATINGS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO -60 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -800 mA SOT-89 350 mW Power Dissipation TO-92 PD 625 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-89 104 ℃ /W Thermal resistance, junction to Ambient TO-92 θJA 200 ℃ /W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVCEO IC=-10mA, IB=0 -60 V Collector-Base Breakdown Voltage BVCBO IC=-10μA, IE=0 -60 V Emitter-Base Breakdown Voltage BVEBO IE=-10μA , IC=0 -5 V Base Cutoff Current IB VCB=-30V, VEB=-0.5V -50 nA Collector Cutoff Current ICEX VCE=-30V, VBE=-0.5V -50 nA Collector Cutoff Current ICBO VCB=-50V, IE=0 VCB=-50V, IE=0, Ta=150°C -0.02 -20 μA μA ON CHARACTERISTICS Ic=-0.1mA, VCE=-10V 75 Ic=-1.0 mA, VCE=-10V 100 Ic=-10 mA, VCE=-10V 100 Ic=-150 mA, VCE=-10V (Note) 100 300 DC Current Gain hFE Ic=-500 mA, VCE=-10V (Note) 50 Collector-Emitter Saturation Voltage (Note) VCE(SAT) Ic=-150mA, IB=-15mA Ic=-500mA, IB=-50mA -0.4 -1.6 V V Base-Emitter Saturation Voltage VBE(SAT) Ic=-150mA, IB=-15mA (Note) Ic=-500mA, IB=-50mA -1.3 -2.6 V V SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product fT Ic=-50mA, VCE=-20V, f=100MHz 200 MHz Output Capacitance Cob VCB=-10V, IE=0, f=100kHz 8 pF Input Capacitance Cib VEB=-2V, IC=0, f=100kHz 30 pF SWITCHING CHARACTERISTICS Turn-on Time tON 45 ns Delay Time tDLY 10 ns Rise Time tR Vcc=-30V, Ic=-150mA IB1=-15mA 40 ns Turn-off Time tOFF 100 ns Storage Time tS 80 ns Fall Time tF Vcc=-6V, Ic=-150mA IB1=IB2=-15mA 30 ns Note: Pulse Test: Pulse Width ≤ 300ms, Duty Cycle≤2.0% |
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