MMBT5401G-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

MMBT5401

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-011.G

ABSOLUATE MAXIUM RATINGS (T

A = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-160

Collector -Emitter Voltage

VCEO

-150

Emitter -Base Voltage

VEBO

-5

DC Collector Current

-600

Power Dissipation

350

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-100μA, IE=0

-160

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA, IB=0

-150

Emitter-Base Breakdown Voltage

BVEBO

IE=-10μA, IC=0

-5

Collector Cut-off Current

ICBO

VCB=-120V, IE=0

-50

Emitter Cut-off Current

IEBO

VBE=-3V, IC=0

-50

DC Current Gain(Note)

hFE

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-50mA

160

400

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-10mA, IB=-1mA

-0.2

IC=-50mA, IB=-5mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-10mA, IB=-1mA

-1

IC=-50mA, IB=-5mA

-1

Current Gain Bandwidth Product

VCE=-10V, IC=-10mA, f=100MHz

100

300

MHz

Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

6.0

Noise Figure

IC=-0.25mA, VCE=-5V

RS=1kΩ, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE

RANK

RANGE

80-170

150-240

200-400

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