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MMBT5089G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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MMBT5089G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 6 page  MMBT5088/MMBT5089 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,Ltd 2 of 6 www.unisonic.com.tw QW-R206-033,B ABSOLUTE MAXIMUM RATING (T A=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT MMBT5088 30 Collector-Emitter voltage MMBT5089 VCEO 25 V MMBT5088 35 Collector-Base voltage MMBT5089 VCBO 30 V Emitter-base voltage VEBO 4.5 V Collector current-continuous IC 100 mA Total Device Dissipation 350 mW Linear Derating Factor above TA= 25℃ PD 2.8 mW/℃ Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are based on a maximum junction temperature of 150 degrees C. Note: 3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL DATA (T A=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θ JA 357 ℃/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS MMBT5088 30 V Collector-Emitter Breakdown Voltage (Note) MMBT5089 BVCEO IC=1.0mA, IB=0 25 V MMBT5088 35 V Collector-Base Breakdown Voltage MMBT5089 BVCBO IC=100μA, IE=0 30 V MMBT5088 VCB=20V, IE=0 50 nA Collector Cut-Off Current MMBT5089 ICBO VCB=15V, IE=0 50 nA VEB=3.0V, IC=0 50 nA Emitter Cutoff Current IEBO VEB=4.5V, IC=0 100 nA ON CHARACTERISTICS MMBT5088 300 900 MMBT5089 VCE=5.0V, IC=100μA 400 1200 MMBT5088 350 MMBT5089 VCE=5.0V, IC=1.0mA 450 MMBT5088 300 DC Current Gain MMBT5089 hFE VCE=5.0V, IC=10mA(Note) 400 Collector-Emitter Saturation Voltage VCE(SAT) IC=10mA, IB=1.0mA 0.5 V Base-Emitter On Voltage VBE(ON) IC=10mA, VCE=5.0V 0.8 V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT VCE=5.0mA, IC=500μA, f=20MHz 50 MHz Collector-Base Capacitance CCB VCB=5.0V, IE=0, f=100kHz 4 pF Emitter-Base Capacitance CEB VEB=0.5V, IC=0, f=100kHz 10 pF MMBT5088 350 1400 Small-Signal Current Gain MMBT5089 hFE VCE=5.0V, IC=1.0mA, f=1.0kHz 450 1800 MMBT5088 3.0 dB Noise Figure MMBT5089 NF VCE=5.0V, IC=100μA, RS=10kΩ, f=10kHz ~ 15.7kHz 2.0 dB Note: Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2.0%. |
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