RJM0603JSC datasheet(7/12 Pages) RENESAS

No. de pieza	RJM0603JSC

Descripción Electrónicos	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

PDF	12 Pages

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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7 / 12 page

RJM0603JSC

Preliminary

R07DS0339EJ0501 Rev.5.01

Page 7 of 11

Jul 22, 2011

 MOS4, MOS5, MOS6 (P Channel)

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

Drain Current ID (A)

Static Drain to Source On State Resistance

vs. Drain Current

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

200

150

100

−5

−10

−15

−20

Gate to Source Voltage VGS (V)

Static Drain to Source On State Resistance vs.

Gate to Source Voltage

−50

−30

−40

−20

−10

−4

−2

−6

−8

−10

−100

−10

−1

−0.1

−0.01

−0.001

−1

−2

−3

−5

−4

−1

−10

100

−100

1000

100

−50

100

150

200

−100

−10

−1

−10

−100

−0.1

−1000

Maximum Safe Operation Area

−0.1

−0.01

Tc = 175

°C

−40°C

VDS = −10 V

Pulse Test

Tc = 175

°C

−40°C

VGS = −4.5 V

−10 V

ID = −10 A

Pulse Test

VGS = −4.5 V

−10 V

−3.5 V

VGS = −3.0 V

−5.0 V

−10 V

Tc = 25

°C

Pulse Test

Tc = 25

°C

Pulse Test

ID = −10 A

Pulse Test

Tc = 25

°C

1 shot Pulse

DC Operation

PW = 10 ms

Operation

in this area

is limited R

DS(on)

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