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WTPB4A60SW Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WTPB4A60SW Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 5 page  WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. Bi-Directional Bi-Directional Bi-Directional Bi-Directional T T T Trio rio rio riode de de de Thyrist Thyrist Thyrist Thyristo o o orrrr Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ I TM) ◆ High Commutation dv/dt General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. Absolute Maximum Ratings (T J= 25°C unless otherwise specified) Symbol Parameter Condition Ratings Units V DRM/VRRM Repetitive Peak Off-State Voltage 600 V I T(RMS) R.M.S On-State Current T J = 110 °C 4.0 A I TSM Surge On-State Current One cycle, Peak value, non- repetitive full cycle 50Hz 30 A 60Hz 31 2 I t I2t 5.1 A2s P GM Peak Gate Power Dissipation 5 W P G(AV) Average Gate Power Dissipation T J = 125 °C 1 W I GM Peak Gate Current T J = 125 °C 4.0 A V GM Peak Gate Voltage 7.0 V T J Operating Junction Temperature -40~+150 ℃ T STG Storage Temperature -40~+150 ℃ Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case(DC) 2.6 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 60 ℃/W Jan 2009. Rev. 0 T02-1 |
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