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BUZ310 Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ310 Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 9 page ![]() Semiconductor Group 4 07/96 BUZ 310 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 2.5 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 10 Inverse diode forward voltage VGS = 0 V, IF = 6 A VSD - 1.05 1.3 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 2 - µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr - 15 - µC |
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