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BUP314S Datasheet(PDF) 1 Page - Siemens Semiconductor Group

No. de pieza BUP314S
Descripción Electrónicos  IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)
PDF  7 Pages
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUP314S Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Feb-07-1997
BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
VCE
IC
Package
Ordering Code
BUP 314S
1200V 25A
TO-218 AB
C67040-A4207-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 kΩ
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 90 °C
IC
17
25
A
Pulsed collector current,
tp = 1 ms
TC = 25 °C
TC = 90 °C
ICpuls
34
50
Avalanche energy, single pulse
IC = 25 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
EAS
65
mJ
Power dissipation
TC = 25 °C
Ptot
300
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150


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