BAV20WS-V datasheet(2/5 Pages) VISHAY

2 / 5 page

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Document Number 85726

Rev. 1.5, 26-Nov-10

BAV19WS-V, BAV20WS-V, BAV21WS-

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that leads are kept at ambient temperature

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that leads are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Value

Unit

Continuous reverse voltage

BAV19WS-V

100

BAV20WS-V

150

BAV21WS-V

200

Repetitive peak reverse voltage

BAV19WS-V

VRRM

120

BAV20WS-V

VRRM

200

BAV21WS-V

VRRM

250

Forward continuous current

250 1)

Rectified current (average) half

wave rectification with resist.

load

IF(AV)

200 1)

Repetitive peak forward current

≥ 50 Hz, θ = 180°

IFRM

625 1)

Surge forward current

t < 1 s, Tj = 25 °C

IFSM

Power dissipation

Ptot

200 1)

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

RthJA

650 1)

K/W

Junction temperature

150 1)

°C

Storage temperature range

Tstg

- 65 to + 150 1)

°C

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 100 mA

IF = 200 mA

1.25

Leakage current

VR = 100 V

BAV19WS-V

100

VR = 100 V, Tj = 100 °C

BAV19WS-V

µA

VR = 150 V

BAV20WS-V

100

VR = 150 V, Tj = 100 °C

BAV20WS-V

µA

VR = 200 V

BAV21WS-V

100

VR = 200 V, Tj = 100 °C

BAV21WS-V

µA

Dynamic forward resistance

IF = 10 mA

Diode capacitance

VR = 0, f = 1 MHz

1.5

Reverse recovery time

IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 Ω

trr

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