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BUW50 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BUW50
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUW50 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUW50 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUW50 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUW50 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW50
DESCRIPTION
·With TO-3PN package
·High speed switching
·Low saturation voltage
APPLICATIONS
·Designed for use in general purpose
power amplifier application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
125
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
25
A
ICM
Collector current-peak
50
A
PD
Totalpower dissipation
TC=25℃
150
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
1.0
℃/W
Fig.1 simplified outline (TO-3PN) and symbol


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