2N6031 datasheet(1/3 Pages) ISC

No. de pieza	2N6031

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6031

DESCRIPTION

・With TO-3 package

・Complement to type 2N5631

・High collector sustaining voltage

・High DC current gain

・Low collector saturation voltage

APPLICATIONS

・For high power audio amplifier and

high voltage switching regulator

circuits applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-140

V

VCEO

Collector-emitter voltage

Open base

-140

V

VEBO

Emitter-base voltage

Open collector

-7

V

IC

Collector current

-16

A

ICM

Collector current-peak

-20

A

IB

Base current

-5.0

A

PD

Total Power Dissipation

TC=25℃

200

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

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2N6031 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2N6031 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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