TIP35C datasheet(1/4 Pages) ISC

No. de pieza	TIP35C

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	4 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

TIP35/35A/35B/35C

DESCRIPTION

・With TO-3PN package

・Complement to type TIP36/36A/36B/36C

・DC current gain hFE=25(Min)@IC=1.5A

APPLICATIONS

・Designed for use in general purpose

power amplifier and switching applications.

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP35

40

TIP35A

60

TIP35B

80

VCBO

Collector-base voltage

TIP35C

Open emitter

100

V

TIP35

40

TIP35A

60

TIP35B

80

VCEO

Collector-emitter voltage

TIP35C

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

25

A

ICM

Collector current-peak

40

A

IB

Base current

5

A

PC

Collector power dissipation

TC=25℃

125

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.0

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

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TIP35C Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

TIP35C Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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