MJF44H11 datasheet(1/2 Pages) ISC

No. de pieza	MJF44H11

Descripción Electrónicos	isc Silicon NPN Power Transistors

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

MJF44H11

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 1.0V(Max.)@ IC= 8A

·Fast Switching Speeds

·Complement to Type MJF45H11

APPLICATIONS

·Designed for general purpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

20

A

Collector Power Dissipation

@TC=25℃

36

PC

Collector Power Dissipation

@Ta=25℃

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.5

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5

℃/W

Número de pieza similar - MJF44H11

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	MJF44H11	80Kb / 8P	Complementary Power Transistors December, 2002 - Rev. 2
ON Semiconductor	MJF44H11	115Kb / 5P	SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS, 36 WATTS April, 2006 ??Rev. 4
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ON Semiconductor	MJF44H11	157Kb / 5P	Complementary Power Transistors April, 2009 ??Rev. 6
Savantic, Inc.	MJF44H11	207Kb / 3P	Silicon NPN Power Transistors

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