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MJ16002 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ16002 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ16002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1.5A; IB= 0.2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.4A B IC= 3A; IB= 0.4A,T B C=100℃ 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.4A B IC= 3A; IB= 0.4A,T B C=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=850V;VBE(off)=1.5V VCEV=850V;VBE(off)=1.5V;TC=100℃ 0.25 1.5 mA ICER Collector Cutoff Current VCE= 850V; RBE= 50Ω,TC= 100℃ 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 5A ; VCE= 5V 5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 200 pF Switching times;Resistive Load td Delay Time 30 100 ns tr Rise Time 100 300 ns ts Storage Time 1000 3000 ns tf Fall Time IC= 3A , VCC= 250V; RB2= 8Ω; IB1= 0.4A; IB2= 0.8A;PW= 30μs; Duty Cycle≤2.0% 60 300 ns isc Website:www.iscsemi.cn 2 |
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