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MJ15026 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ15026 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor MJ15026 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ;IB= 0 200 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 4A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICEO Collector Cutoff Current VCE= 120V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 200V;VBE(off)= 1.5V 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5A ; VCE= 5V 25 150 hFE-2 DC Current Gain IC= 16A ; VCE= 5V 6 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; ftest= 1.0MHz 15 MHz COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 750 pF |
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