MJ4030 datasheet(1/2 Pages) ISC

No. de pieza	MJ4030

Descripción Electrónicos	isc Silicon PNP Darlingtion Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

MJ4030

DESCRIPTION

·With TO-3 package

·Respectively complement to type MJ4035

·DARLINGTON

·High DC current gain

APPLICATIONS

·For use as output devices in complementary general

purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-16

A

IB

B

Base Current

-0.5

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.17

℃/W

isc Website：www.iscsemi.cn

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MJ4030 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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