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BUV23 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUV23
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV23 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV23 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV23 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUV23 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUV23
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0;L=25mH
325
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=8 A;IB=1.6A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=16 A;IB=3.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=16 A;IB=3.2 A
1.5
V
ICEX
Collector cut-off current
VCE=400V;VBE=-1.5V
TC=125℃
3.0
12
mA
ICEO
Collector cut-off current
VCE=260V;IB=0
3
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
60
hFE-2
DC current gain
IC=16A ; VCE=4V
8
fT
Transition frequency
IC=2A ; VCE=15V; f=4MHz
8.0
MHz
Switching times
ton
Turn-on time
0.8
μs
ts
Storage time
2.5
μs
tf
Fall time
IC=16A ;IB1=-IB2=3.2A
VCC=100V ;RC=6.25Ω
0.4
μs



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