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BUL56B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUL56B
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL56B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL56B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL56B Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUL56B Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUL56B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
250
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=1mA ;IC=0
10
V
VCEsat-1
Collector-emitter saturation voltage
IC=1A ;IB=0.1A
0.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=7A ;IB=0.7A
0.6
V
VCEsat-3
Collector-emitter saturation voltage
IC=12A; IB=1.2A
1.2
V
VBEsat-1
Base-emitter saturation voltage
IC=7A; IB=0.7A
1.2
V
VBEsat-2
Base-emitter saturation voltage
IC=12A; IB=1.2A
1.8
V
ICBO
Collector cut-off current
VCB=250V; IE=0
TC=125℃
10
100
μA
ICEO
Collector cut-off current
VCE=90V ;IB=0
100
μA
IEBO
Emitter cut-off current
VEB=9V; IC=0
TC=125℃
10
100
μA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
30
90
hFE-2
DC current gain
IC=5A ; VCE=5V
25
60
hFE-3
DC current gain
IC=12A ; VCE=1V
5
fT
Transition frequency
IC=0.2A ; VCE=4V
20
MHz
Cob
Output capacitance
VCB=100V ;f=1MHz
100
pF



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