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BU826 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BU826
Descripción Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU826 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU826
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 375V(Min)
·High Switching Speed
APPLICATIONS
Designed for line operated switchmode applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage(VBE= 0)
800
V
VCEO
Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
125
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃/W
isc Website：www.iscsemi.cn


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