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BU103A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU103A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU103A DESCRIPTION ·Continuous Collector Current-IC= 1A ·Collector Power Dissipation- : PC= 30W @TC= 25℃ APPLICATIONS ·Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE= 220Ω 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.0 ℃/W isc Website：www.iscsemi.cn |
Número de pieza similar - BU103A |
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Descripción similar - BU103A |
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