BDX67 datasheet(1/3 Pages) ISC

No. de pieza	BDX67

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BDX67

DESCRIPTION

・With TO-3 package

・High current capability

・DARLINGTON

APPLICATIONS

・Designed for power amplification and

switching application.

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

80

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

16

A

ICM

Collector current(peak)

20

A

IB

Base current

0.25

A

PT

Total power dissipation

TC=25℃

117

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.17

℃/W

Fig.1 simplified outline (TO-3) and symbol

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BDX67 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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