BDW44 datasheet(1/2 Pages) ISC

No. de pieza	BDW44

Descripción Electrónicos	isc Silicon PNP Darlington Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDW44

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -45V(Min)

·High DC Current Gain

: hFE= 1000(Min) @IC= -5A

·Low Collector Saturation Voltage

: VCE(sat)= -2.0V(Max.)@ IC= -5.0A

= -3.0V(Max.)@ IC= -10A

·Complement to Type BDW39

APPLICATIONS

·Designed for general purpose and low speed switching

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-45

V

VCEO

Collector-Emitter Voltage

-45

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IB

B

Base Current-Continuous

-0.5

A

PC

Collector Power Dissipation

@ TC=25℃

85

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.47

℃/W

isc Website：www.iscsemi.cn

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BDW44 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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