Document Number: 88895

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Revision: 19-Apr-11

3

This document is subject to change without notice.

ESH1PB, ESH1PC, ESH1PD

Vishay General Semiconductor

New Product

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.4

0.6

0.8

1.2

1.4

0.1

10

1

100

0.01

1.0

0.2

1.6

T

T

T

T

Instantaneous Forward Voltage (V)

20

40

60

80

100

0.1

1

10

100

10

30

50

70

90

0.01

1000

T

T

T

T

Percent of Rated Peak Reverse Voltage (%)

0.1

10

1

100

1

100

10

1000

Reverse Voltage (V)

0.01

10

1

100

1

10

100

0.1

1000

t - Pulse Duration (s)

DO-220AA (SMP)

Cathode Band

0.086 (2.18)

0.074 (1.88)

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

0.013 (0.35)

0.004 (0.10)

0.012 (0.30)

0.000 (0.00)

0.018 (0.45)

0.006 (0.15)

0.045 (1.15)

0.033 (0.85)

0.036 (0.91)

0.024 (0.61)

0.032 (0.80)

0.016 (0.40)

0.103 (2.60)

0.087 (2.20)

0.053 (1.35)

0.041 (1.05)

0.012 (0.30) REF.

0.100

(2.54)

0.105

(2.67)

0.025

(0.635)

0.030

(0.762)

0.050

(1.27)