BD546 datasheet(1/2 Pages) ISC

No. de pieza	BD546

Descripción Electrónicos	isc Silicon PNP Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD546/A/B/C

DESCRIPTION

·Collector Current -IC= -15A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A

-80V(Min)- BD546B; -100V(Min)- BD546C

·Complement to Type BD545/A/B/C

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD546

-40

BD546A

-60

BD546B

-80

VCBO

Collector-Base Voltage

BD546C

-100

V

BD546

-40

BD546A

-60

BD546B

-80

VCEO

Collector-Emitter

Voltage

BD546C

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

Collector Power Dissipation

@ Ta=25℃

3.5

PC

Collector Power Dissipation

@ TC=25℃

85

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.47

℃/W

Rth j-c

Thermal Resistance,Junction to Ambient

35.7

℃/W

isc Website：www.iscsemi.cn

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BD546 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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