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BD545 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BD545
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD545 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD545/A/B/C
DESCRIPTION
·Collector Current -IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A
80V(Min)- BD545B; 100V(Min)- BD545C
·Complement to Type BD546/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD545
40
BD545A
60
BD545B
80
VCBO
Collector-Base Voltage
BD545C
100
V
BD545
40
BD545A
60
BD545B
80
VCEO
Collector-Emitter
Voltage
BD545C
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
Collector Power Dissipation
@ Ta=25℃
3.5
PC
Collector Power Dissipation
@ TC=25℃
85
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.47
℃/W
Rth j-c
Thermal Resistance,Junction to Ambient
35.7
℃/W
isc Website：www.iscsemi.cn


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