BD311 datasheet(1/3 Pages) ISC

No. de pieza	BD311

Descripción Electrónicos	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD311

DESCRIPTION

・With TO-3 package

・High DC current gain

・Excellent safe operating area

・Complement to type BD312

APPLICATIONS

・Designed for power amplifier applications

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

60

V

VCEO

Collector-emitter voltage

Open base

60

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

10

A

ICM

Collector current(peak)

20

A

IB

Base current

4

A

PT

Total power dissipation

TC=25℃

115

W

Tj

Junction temperature

-65~200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.52

℃/W

Fig.1 simplified outline (TO-3) and symbol

Número de pieza similar - BD311

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Motorola, Inc	BD311	103Kb / 3P	10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
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BD311 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BD311 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - BD311

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