BD250 datasheet(1/3 Pages) ISC

No. de pieza	BD250

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD250/A/B/C

DESCRIPTION

・With TO-3PN package

・Complement to type BD249/A/B/C

・125 W at 25°C case temperature

・25 A continuous collector current

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD246

-55

BD246A

-70

BD246B

-90

VCBO

Collector-base voltage

BD246C

Collector emitter

-115

V

BD246

-45

BD246A

-60

BD246B

-80

VCEO

Collector-emitter voltage

BD246C

Open base

-100

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-25

A

ICM

Collector current-peak

-40

A

IB

Base current

-5

A

PC

Collector power dissipation

TC=25℃

125

W

Tj

Junction temperature

-65~150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1

℃/W

Fig.1 simplified outline (TO-3PN) and symbol

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BD250 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BD250 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - BD250

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