BD136 datasheet(1/3 Pages) ISC

No. de pieza	BD136

Descripción Electrónicos	Silicon PNP Power Transistors

PDF	3 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD136 BD138 BD140

DESCRIPTION

・

・With TO-126 package

・High current

・Complement to type BD135/137/139

APPLICATIONS

・Driver stages in high-fidelity amplifiers

and television circuits

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD136

-45

BD138

-60

VCBO

Collector-base voltage

BD140

Open emitter

-100

V

BD136

-45

BD138

-60

VCEO

Collector-emitter voltage

BD140

Open base

-100

V

VEBO

Emitter -base voltage

Open collector

-5

V

IC

Collector current (DC)

-1.5

A

ICM

Collector current-Peak

-2

A

IBM

Base current-Peak

-1

A

Pt

Total power dissipation

Tmb≤70℃

8

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Tamb

Operating ambient temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

Thermal resistance from junction to ambient

100

K/W

Rth j-mb

Thermal resistance from junction to mounting base

10

K/W

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BD136 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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