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3DD201 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 3DD201
Descripción Electrónicos  Silicon NPN Power Transistors
PDF  3 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DD201 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  3DD201 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 3DD201 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 3DD201 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD201
DESCRIPTION
・With TO-3 package
・High collector-base breakdown voltage
: VCBO=350V
APPLICATIONS
・For TV horizontal output applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
350
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
8
A
PC
Collector power dissipation
TC=25℃
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
MAX
UNIT
Rθjc
Thermal resistance junction to case
1.5
℃/W
Fig.1 simplified outline (TO-3) and symbol


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