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2SD5702 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD5702 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD5702 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 40 200 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=3A ; VCE=5V 5 15 fT Transition frequency IC=1A ; VCE=10V 3 MHz VF Diode forward voltage IF=6A 2.0 V tf Fall time IC=4A ;IB1=0.8A;IB2=-1.6A VCC=200V; RL=50Ω 0.4 μs |
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