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2SD2579 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2579 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2579 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 5 8 hFE-2 DC current gain IC=1A ; VCE=5V 20 35 tf Fall time IC=4A;RL=50Ω IB1=0.8A;-IB2=1.6A;VCC=200V 0.3 μs |
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