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2SD860 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD860
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD860 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD860 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD860 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD860
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 30mA; IB= 0
250
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.0
V
VBE(on)
Base-Emitter On Voltage
IC= 2A; VCE= 10V
1.5
V
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
1
mA
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
40
250
hFE-2
DC Current Gain
IC= 2A; VCE= 10V
10
Switching Times
ton
Turn-On Time
0.2
μs
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
2.0
μs
hFE-1 Classifications
R
Q
P
40-90
70-150
120-250
isc Website：www.iscsemi.cn
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