2SD523 datasheet(1/2 Pages) ISC

No. de pieza	2SD523

Descripción Electrónicos	isc Silicon NPN Darlington Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD523

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= 3A

·Low Collector Saturation Voltage-

: VCE (sat)= 1.5V(Max.)@ IC= 3A

APPLICATIONS

·Designed for power switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continunous

7

A

IB

B

Base Current-Continunous

0.2

A

PC

Collector Power Dissipation

@TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~+150

℃

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2SD523 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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